Authors
Abstract
When the electronic components are exposed to neutron irradiation, electrical properties change by interaction of neutrons in these parts such as capacitance, reverse bias current, the minority carrier lifetime, etc. These changes are very important, so that may impair the performance of the device and disable it. So the measurement of the damage by neutrons in these parts is necessary. One of the most important parameters for expressing the damage to electronic components is a constant, α that is the inverse current of the damage.The constant (α) is the slope of the reverse current curve versus the radiation flux. The aim of this work is measurement of the damage reverse current of constant α for diodes 1N4007, BYV27 and BYV95 in various voltages and temperatures.These diodes have been irradiated at the Tehran Research Reactor by fission neutron spectrum.The results are in good agreement with the theoretical relations.
Keywords
- [1] Leroy, and Rancoita, P. G., Particle Interaction and Displacement Damage in Silicon Devices Operated in Radiation Environment, IOP Publishing, 2007, pp.493-625.
- [2] Reed, R., LaBel, K., Kim, H., Leidecker, H. and Lohr, J., Test Report of Proton and Neutron Exposures of Devices that Utilize Optical Components and AreContained in the CIRS Instrument, NASA Test Report i090397, 1997.
- [3] ASTM E722 Standard Practice for Characterizing Neutron Energy Fluence Spectra in Termsof an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics, American Society for Testing Materials 722–94, Philadelphia, Pennsylvania, 1994.
- [4] Korde, R, “The Effect of Neutron Irradiation on Silicon Photodiodes,” IEEE Transactions on Nuclear Science, Vol. 36, Issue 6, 1989, pp. 2169-2175.
- [5] Fraser, D. A., The Physics of Semiconductor Devices, Oxford Physics Series, 4th Edition, 1986.
- [6] Sze, S. M., Physics of Semiconductor Devices, Second Edition, J. Wiley & Sons, 1981.
- [7] dler, R. B., Smith, A. C. and Longini, R. L., Introduction to Semiconductor Physics, Semiconductor Electronics Education Committee (SEEC), Vol. 1, NewYork: Wiley, 1964.
- [8] Navon, D. H., ElectronicMatrials and Devices, Boston, Houghton Mifflin, 1975.
- [9] Robert, M. B. and Donovan, P., Fundamental of Silicon Integrated Device Technology, Vol. 1, Prentice-Hall INC, 1967.
- K., et al., “Radiation Damage by Neutrons Andphotons to Silicon Detectors”, Nucl. Inst. and Meth. A322, 1992, pp.177-188.
- E., et al., “Temperature Effects on Radiation Damage to Silicon Detectors, Nucl. Inst. and Meth. A326, 1993, pp. 373-380.
- Chilingarov, A., et al., “Radiation Studies and Operational Projections for Silicon in the Atlas Inner Detector,” 6th Pisa Meeting on Advanced Detectors, 360, Issues 1–2, Italia, 1995, pp. 432–437.
- Lemeilleur, F., et al., “Study of Characteristic of Silicon Detectors Irradiated with 24GeV/c Protons between –20°C and +20°C,” Inst. and Meth. A360, 1995, pp. 438-444.
- Barberis, E., et al., “Radiation Damage in Silicon Detectors – Self Annealing Corrections,” SITP-Internal Note, SITP-002, 1991.
- Hall, G., et al., “Neutron Radiation Damage Studies of Silicon Detectors – Summary of Recent Results,” Imperial College Internal Note, IC/HEP/91/1, 1991.
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