investigating space radiation
Gholamreza Raisali; Masume Soleimaninia; Amir Moslehi
Volume 16, Issue 2 , June 2023, , Pages 43-54
Abstract
In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations. To this purpose, a memory cell which is consisted of NMOS and PMOS was simulated ...
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In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations. To this purpose, a memory cell which is consisted of NMOS and PMOS was simulated using Silvaco TCAD tool. Then, the variations in output voltages were studied after striking incident particles with different values of Linear Energy Transfer (LET) at different regions of the transistors. The Qcritical was obtained by integrating the output current when the output voltages were inverted. To determine the sensitive volume, the minimum amount of LET in which the output logic state of the memory cell flips, was considered as a criteria of sensitivity. The results showed the value of 0.054 µm3 and 1.48 fC for sensitive volume and critical charge, respectively which are in good agreement with the references.
S. Boorboor; S. A. H. Feghhi; H. Jafari
Volume 6, Issue 4 , January 2014, , Pages 23-28
Abstract
Shape and size of sensitive volume are the most important parameters to model electronic devices for calculation of the SEU rate from space radiations. So far different models have been proposed for estimation of the sensitive volume. In this work, results of three models including RPP, Tetrahedral and ...
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Shape and size of sensitive volume are the most important parameters to model electronic devices for calculation of the SEU rate from space radiations. So far different models have been proposed for estimation of the sensitive volume. In this work, results of three models including RPP, Tetrahedral and Nested in calculation of sensitive volume have been compared with experimental result for AT60142 SRAM. GEANT4 as a Monte Carlo code has been used to calculate energy loss and energy straggling of ions with considering metallization and oxide layers. Comparisons between Monte Carlo and experimental results shows that RPP model estimates the SEU cross section with a large deviation in whole LET range, tetrahedral has good response in low LET's but don't follow experimental result for high LET particles and nested sensitive volume produce acceptable results for whole of LET range.
