تعیین حجم حساس و بار بحرانی برای وقوع رخداد SEU در حافظه‌های نانومتری SRAM

رئیس علی, غلامرضا; سلیمانی نیا, معصومه; مصلحی, امیر

doi:10.30699/jsst.2023.1423

نوع مقاله : مقالة‌ تحقیقی‌ (پژوهشی‌)

نویسندگان

¹ استاد، سازمان انرژی اتمی، پژوهشگاه علوم و فنون هسته ای، تهران، ایران

² دکتری، پژوهشگاه علوم و فنون هسته ای، سازمان انرژی اتمی ایران، تهران، ایران

³ استادیار، پژوهشگاه علوم و فنون هسته ای، سازمان انرژی اتمی ایران، تهران، ایران

https://doi.org/10.30699/jsst.2023.1423

چکیده

در این پژوهش، حجم حساس و بار بحرانی یک حافظه SRAM با تکنولوژی 65 نانومتری CMOS، به عنوان دو کمیت مهم در محاسبات ترابرد پرتو در رخداد به‌هم‌ریختگی‌ تک‌حادثه‌ای (SEU) که رایج‌ترین رخداد در تحقیقات فضایی محسوب می‌شود، تعیین شد. بدین منظور، ابتدا یک سلول حافظه متشکل از ترانزیستورهای NMOS و PMOS با استفاده از نرم‌افزار Silvaco TCAD شبیه‌سازی شد. برای تعیین دو کمیت مذکور، پرتو با مقادیر مختلف از انتقال خطی انرژی (LET) به نواحی گوناگون ترانزیستورها تابانده شد و ولتاژ خروجی مورد بررسی قرار گرفت. بار بحرانی به عنوان کمترین بار لازم برای تغییر وضعیت منطقی سلول، با انتگرال‌گیری از جریان درین در لحظه تغییر وضعیت ولتاژ خروجی حاصل شد. برای تعیین حجم حساس نیز کمینه LET که در هر نقطه منجر به تغییر در وضعیت منطقی خروجی‌ها می‌شود، معیاری از حساسیت در نظر گرفته شد. نتایج ضمن تطابق با مراجع، مقادیر حجم حساس و بار بحرانی را به ترتیب µm3 054/0 و fC 48/1 نشان دادند.

کلیدواژه‌ها

موضوعات

بررسی تشعشعات فضایی

عنوان مقاله [English]

Determination of the sensitive volume and critical charge for induction of SEU in nanometer SRAMs

نویسندگان [English]

Gholamreza Raisali ¹
Masume Soleimaninia ²
Amir Moslehi ³

¹ Professor, Nuclear Science and Technology Institute, Atomic Energy Organization of Iran, Tehran, Iran

² Ph.D., Nuclear science and technology research institute, Technical expert/atomic energy organization of Iran, Tehran, Iran

³ Assistant Professor, Nuclear science and technology research institute, Atomic Organization of Iran, Tehran, Iran

چکیده [English]

In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations. To this purpose, a memory cell which is consisted of NMOS and PMOS was simulated using Silvaco TCAD tool. Then, the variations in output voltages were studied after striking incident particles with different values of Linear Energy Transfer (LET) at different regions of the transistors. The Qcritical was obtained by integrating the output current when the output voltages were inverted. To determine the sensitive volume, the minimum amount of LET in which the output logic state of the memory cell flips, was considered as a criteria of sensitivity. The results showed the value of 0.054 µm3 and 1.48 fC for sensitive volume and critical charge, respectively which are in good agreement with the references.

کلیدواژه‌ها [English]

Sensitive Volume
Critical Charge
nanometer SRAM
Linear Energy Transfer (LET)
Single Event Upset (SEU)
Silvaco TCAD

مراجع

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علوم و فناوری فضایی

تعیین حجم حساس و بار بحرانی برای وقوع رخداد SEU در حافظه‌های نانومتری SRAM

مراجع

مراجع

دوره 16، شماره 2 - شماره پیاپی 56
خرداد 1402
صفحه 43-54

تعیین حجم حساس و بار بحرانی برای وقوع رخداد SEU در حافظه‌های نانومتری SRAM

مراجع

مراجع

دوره 16، شماره 2 - شماره پیاپی 56خرداد 1402صفحه 43-54

دوره 16، شماره 2 - شماره پیاپی 56
خرداد 1402
صفحه 43-54